Characterization of Semiconductor Materials Using Electron Holography
نویسندگان
چکیده
منابع مشابه
Quantitative electron holography of biased semiconductor devices.
Electron holography is used to measure electrostatic potential profiles across reverse-biased Si p-n junctions in situ in the transmission electron microscope. A novel sample geometry based on focused ion-beam milling is developed, and results are obtained for a range of sample thicknesses and bias voltages to allow the holographic contrast to be interpreted. The physical and electrical nature ...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2017
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927617007681